Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power General Motors SERIAL DATA GATEWAY

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Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L512M32D2PU-107 WT:B | Dynamic random access memory | DEX Wind Power General Motors SERIAL DATA GATEWAYMicron Technology DRAM , Part #: MT52L512M32D2PU 107 WT: B features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on t CK